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Faculty and Staff Profiles

Aidong Shen

Associate Professor


Grove School of Engineering


Electrical Engineering


Steinman Hall T - 543

p: (212 ) 650-8376

f: (212) 650-6107


  • Profile

    Dr. Shen is an Associate Professor in the Department of Electrical Engineering. Before joining CCNY, he worked at Nortel Networks (Ottawa, Canada), National Research Council (Ottawa, Canada), Tohoku University (Sendai, Japan), Laboratoire de spectrométrie physique (Grenoble, France), and Fraunhofer Institute for Applied Solid State Physics (Freiburg, Germany).

    Dr. Shen's research is focused on the growth of various compound semiconductor materials by molecular beam epitaxy (MBE). He pioneered the research on III-V ferromagnetic semiconductors. Very recently, he established the new capability at CCNY to grow ZnO-based wide band gap semiconductors. In addition to study various physical properties of MBE-grown nano-materials and nano-structures, his research group is also investigating numerous device applications. Dr. Shen has published more than 100 peer-reviewed articles plus 150 conference and meeting presentations. His journal publications have been cited for more than 3000 times according to ISI's Web of Science.

    Dr. Shen is a member of the American Physical Society, the American Vacuum Society, and American Association for the Advancement of Science. He is a Program Committee member of the 15th International Conference on II-VI Compounds, a Program Committee member of the 1st MIRTHE-IROn-SensorCAT Virtual Conference, and the editor of the 26th North American Molecular Beam Epitaxy Conference.

  • Education

    Ph. D., Applied Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Science, 1992

    B.S., Physics, Xiamen University, 1987

  • Courses Taught

    Semiconductor Materials and Devices (EE339)

  • Research Interests

    Molecular beam epitaxy (MBE), compound semiconductor materials (III-V, II-VI and magnetic) and devices.

  • Publications

    Selected Publications: (Total over 100 with over 3000 citations)

    • J.D. Wu, Y.S. Huang, D.Y. Lin, W.O. Charles, A. Shen, M.C. Tamargo, and K.K. Tiong, "Temperature-dependent photoluminescence and contactless electroreflectance characterization of a ZnCdSe/ZnCdMgSe asymmetric coupled quantum well structure", J. Alloys & Compounds, 509, 3751-3755 (2011).
    • Aidong Shen (ed.), "Papers from the 26th North American Molecular Beam Epitaxy Conference", (AIP Press, New York , 2010), ISBN 978-0-9823012-4-1.
    • J.D. Wu, Y.S. Huang, B.S. Li, A. Shen, M.C. Tamargo, and K.K. Tiong, "Photoluminescence and photoreflectance characterization of ZnCdSe/MgSe multiple quantum wells", J. Appl. Phys. 108, 123105 (2010).
    • Qiang Zhang, Yunpu Li, Xuejun Liu, Daniela Pagliero, Aidong Shen, Carlos A. Meriles and Maria C. Tamargo, "Dependence of electron spin relaxation times on the crystal orientation of CdTe grown on (100)ZnSe/GaAs substrates", Phys. Stat. Sol. (c) 7, 1665 (2010).
    • J.D. Wu, C. T. Huang, Y.S. Huang, W.O. Charles, A. Shen, and M.C. Tamargo, "Photoreflectance and Fourier transform infrared spectroscopy study of intersubband transitions of a ZnxCd1-xSe/Znx′Cdy′Mg1-x′-y′Se asymmetric coupled quantum well structure for quantum cascade laser application", Appl. Phys. Lett. 95, 191905 (2009).
    • A. Shen, W.O. Charles, B.S. Li, K.J. Franz, C. Gmachl, Q. Zhang, and M.C. Tamargo, "Wide band gap II-VI selenides for short wavelength intersubband devices", J. Crystal Growth, 311, 2109 (2009).
    • B.S. Li, K. Akimoto, and A. Shen, "Growth of Cu2O thin films with high hole mobility by introducing a low temperature buffer layer", J. Crystal Growth 311, 1102 (2009).
    • QiangZhang, William Charles, Bingsheng Li, Aidong Shen, Carlos A. Meriles, and Maria C. Tamargo,"Control of crystal orientation of CdTe epitaxial layers grown on (001) GaAs with ZnSe buffer layer by molecular beam epitaxy", J. Crystal Growth, 311, 2603-2607 (2009).
    • B. S. Li, A. Shen, W.O. Charles, Q. Zhang, and M.C. Tamargo, "Mid-infrared intersubband absorption in wide band gap II-VI ZnxCd1-xSe multiple quantum wells with metastable zincblende MgSe barriers", Appl. Phys. Lett., 92, 261104 (2008).
    • Kale J. Franz, William O. Charles, Aidong Shen, Anthony J. Hoffman, Maria C. Tamargo, and Claire Gmachl, "ZnCdSe/ZnCdMgSe quantum cascade electro-luminescence", Appl. Phys. Lett. 92, 121105 (2008).
    • W. O. Charles, A. Shen, K. J. Franz, C. Gmachl, Q. Zhang, Y. Gong, G. F. Neumark, and M. C. Tamargo, "Growth and characterization of ZnCdSe/ZnCdMgSe asymmetric coupled quantum well structures for quantum cascade laser applications", J. Vac. Sci. Technol. B 26, 1171 (2008).
    • B. S. Li, R. Akimoto, and A. Shen, "Thermal annealing effects on intersubband transitions in (CdS/ZnSe)/BeTe quantum wells", Appl. Phys. Lett. 92, 021123 (2008).
    • A. Shen, H. Lu, W. Charles, I. Yokomizo, M. C. Tamargo, K. Franz, C. Gmachl, S.K. Zhang, X. Zhou, R. R. Alfano, and H. C. Liu, "Intersubband absorption in CdSe/ZnCdMgSe self-assembled quantum dots multi-layers", Appl. Phys. Lett. 90, 071910 (2007).
    • H. Lu, A. Shen, W. Charles, I. Yokomizo, M. C. Tamargo, K. Franz, C. Gmachl, and M. Munoz, "Optical Characterization of intersubband transitions of ZnCdSe/ZnCdMgSe multiple quantum well structures characterized by contactless electroreflectance", Appl. Phys. Lett. 89, 241921 (2006).
    • H. Lu, A. Shen, M. C. Tamargo, C. Y. Song, and H. C. Liu, S.K. Zhang, R.R. Alfano, M. Munoz, "Midinfrared intersubband absorption in ZnCdSe/ZnCdMgSe multiple quantum well structures", Appl. Phys. Lett. 89, 131903 (2006).
    • M. N. Perez-Paz, H. Lu, A. Shen, F. Jean Mary, D. Akins, and M. C. Tamargo, "Magnesium effects on CdSe Self-Assembled Quantum Dot formation on ZnCdMgSe Layers", J. Crystal Growth 294, 296 (2006).
    • H. C. Liu, R. Dudek, A. Shen, E. Dupont, C. Y. Song, Z. R. Wasilewski, and M. Buchanan, "High absorption (>90%) quantum well infrared photodetectors", Appl. Phys. Lett. 79, 4237 (2001).
    • A. G. U. Perera, S. G. Matsik, B. Yaldiz, H. C. Liu, A. Shen, M. Gao, Z. R. Wasilewski, and M. Buchanan, "Heterojunction wavelength-tailorable far-infrared photodetectors with response out to 70 μm", Appl. Phys. Lett. 78, 2241 (2001).
    • A. Shen, H. C. Liu, M. Gao, E. Dupont, M. Buchanan, J. Ehret, G. J. Brown, and F. Szmulowicz, "Resonant cavity enhanced p-type GaAs/AlGaAs quantum well infrared photodetectors", Appl. Phys. Lett., 77, 2400 (2000).
    • H. C. Liu, C. Y. Song, A. Shen, M. Gao, Z. R. Wasilewski, and M. Buchanan, "GaAs/AlGaAs quantum well photodetector for visible and middle infrared dual-band detection", Appl. Phys. Lett. 77, 2437 (2000).
    • F. Szmulowicz, A. Shen, H. C. Liu, G. J. Brown, Z. R. Wasilewski, and M. Buchanan, "Temperature dependence of photoresponse of p-type GaAs/AlGaAs multiple-quantum wells - theory and experiment", Phys. Rev. B 61, 13798 (2000).
    • A. Shen, H. C. Liu, F. Szmulowicz, M. Buchanan, M. Gao, G. J. Brown, and J. Ehret, "Optimizing well doping density for GaAs/AlGaAs p-type quantum well infrared photodetectors", J. Appl. Phys. 86, 5232 (1999).
    • Beschoten, P.A. Crowell, I. Malajovich, D.D. Awschalom, F. Matsukura, A. Shen, and H. Ohno, "Magnetic circular dichroism studies of carrier-induced ferromagnetism in (Ga,Mn)As", Phys. Rev. Lett. 83, 3073 (1999).
    • A. Shen, F. Matsukura, S.P. Guo, Y. Sugawara, H. Ohno, M. Tani, H. Abe, and H.C. Liu, "Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As", J. Crystal Growth 202, 679 (1999).
    • S. P. Guo, A. Shen, F. Matsukura, Y. Ohno, and H. Ohno, "InAs and (In,Mn)As nanostructures grown on GaAs (100), (211)B, and (311)B substrates", J. Crystal Growth 202, 684 (1999).
    • H. Ohno, N. Akiba, F. Matsukura, A. Shen, K. Ohtani, and Y. Ohno, "Spontaneous splitting of ferromagnetic (Ga,Mn)As valence band observed by resonant tunneling spectroscopy", Appl. Phys. Lett. 73, 363 (1998).
    • N. Akiba, F. Matskura, A. Shen, Y. Ohno, H. Ohno, A. Oiwa, S. Katsumoto, and Y. Iye, "Interlayer exchange in (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As semiconducting ferromagnet/nomagnet/ferromagnet trilayer structures", Appl. Phys. Lett. 73, 2122 (1998).
    • A. Shen, H. Ohno, F. Matsukura, H.C. Liu, N. Akiba, Y. Sugawara, T. Kuroiwa, and Y. Ohno, "Superlattice and multilayer structures based on ferromagnetic semiconductor (Ga,Mn)As", Physica B 251, 809 (1998).
    • F. Matsukura, H. Ohno, A. Shen, and Y. Sugawara, "Transport properties and origin of ferromagnetism in (Ga,Mn)As", Phys. Rev. B 57, R2037 (1998).
    • A. Shen, Y. Horikoshi, H. Ohno, and S. P. Guo, "Reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures under high As overpressure", Appl. Phys. Lett., 71, 1540 (1997).
    • A. Shen, H. Ohno, F. Matsukura, Y. Sugawara, N. Akiba, T. Kuroiwa, A. Oiwa, A. Endo, S. Katsumoto and Y. Iye, "Epitaxy of (Ga,Mn)As, a new diluted magnetic semiconductor based on GaAs", J. Crystal Growth, 176, 1069 (1997).
    • H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto and Y. Iye, "(Ga,Mn)As: a new diluted magnetic semiconductor based on GaAs", Appl. Phys. Lett. 69, 363 (1996).


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