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Faculty and Staff Profiles

Cory Dean

Assistant Professor


Division of Science




Marshak 425

p: 212-650-6012

f: 212-650-5516


w: View my website >>

  • Profile

    2013 - Assistant Professor, Department of Physics, The City College of New York,
    City University of New York.
    2009 – 2012 NSERC postdoctoral fellow, Department of Electrical Engineering and
    Mechanical Engineering, Columbia University
    2005 – 2009 NSERC graduate fellow, Department of Physics, McGill University,
  • Education

    • BSc. Physics and mathematics, Queens University, Canada
    • MSc Physics, Queens University, Canada
    • Ph.D. Physics, McGill University, Canada

  • Research Interests

    Our research focuses on both fundamental studies, and technological applications of solid state devices at the meso- and nano-scale. General areas of study include electron transport in degenerate many body systems where strong interactions lead to new states of matter and novel electronic behaviour resulting from new device archictectures. Systems that we study include layered materials such as graphene and related heterostructures, transition metal dichalcogenides, and topological insulators as well as more conventional 2D electron systems such as III-V semiconductors. We probe these systems by combining transport studies with a variety of experimental knobs such as applied magnetic and electrostatic fields, variable tempeartures from ambient down to miliKelvin, high vacuum, spatial confinement down to the nano-scale, variable charge carrier densities, and unconventional NMR techniques.

  • Publications


    Hofstadter's butterfly in moire superlattices: A fractal quantum Hall effect
    C. R. Dean, L. Wang, P. Maher, C. Forsythe, F. Ghahari, Y. Gao, J. Katoch, M. Ishigami, P. Moon, M. Koshino, T. Taniguchi, K. Watanabe, K. L. Shepard, J. Hone, and P. Kim (2012) [arXiv]

    Evidence for a Spin Phase Transition at nu = 0 in Bilayer Graphene
    P. Maher , C.R. Dean, A. F. Young , T. Taniguchi, K. Watanabe, K. L. Shepard, J. Hone, and P. Kim. Nature Physics (2013 - in press) [arXiv]


    Negligible Environmental Sensitivity of Graphene in a hexagonal Boron Nitride/graphene/h-BN Sandwich
    L. Wang, Z. Chen, C.R. Dean, T. Taniguchi, K. Watanabe, L. Brus, J. Hone. ACS Nano 6, 9314-9 (2012) [link]

    Renormalization of the Graphene Dispersion Velocity Determined from Scanning Tunneling Spectroscopy
    J. Chae, S. Jung, A. F. Young, C. R. Dean, L. Wang, Y. Gao, K. Watanabe, T. Taniguchi, J. Hone, K. L. Shepard, P. Kim, N. B. Zhitenev, and J. A. Stroscio. Phys. Rev. Lett. 109, 116802 (2012) [link]

    Graphene growth on h‐BN by Molecular Beam Epitaxy
    J.M. Garcia, U. Wurstbauer, A. Levy, L.N. Pfeiffer, A. Pinczuk, A.S. Plaut, L. Wang, C.R. Dean, R. Buizza, A.M. Van Der Zande, J. Hone, K. Watanabe and T. Taniguchi. Solid State Comm. 152 (2012) [link]

    Chemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated Graphene
    N. Petrone, C.R. Dean, I. Meric, A. van der Zande, P. Huang, L. Wang, D. Muller, K.L. Shepard, J. Hone. Nano. Lett. 12, 2751−2756 (2012). [link]

    Graphene Based Heterostructures
    C.R. Dean, A.F. Young, L. Wang, I. Meric, G.-H. Lee, K. Watanabe, T. Taniguchi, K. Shepard, P. Kim and J. Hone. Solid State Comm. 152, 1275-1282 (2012) [link]

    Electronic compressibility of gapped bilayer graphene
    A. F. Young, C. R. Dean, I. Meric, S. Sorgenfrei, H. Ren, K. Watanabe, T. Taniguchi, J. Hone, K.L. Shepard, and P. Kim Phys. Rev. B 85, 235458 (2012). [link]
    Spin and valley quantum Hall ferromagnetism ingraphene
    A.F. Young, C.R. Dean, L. Wang, H. Ren, P. Cadden-Zimansky , K. Watanabe, T. Taniguchi, J. Hone, K.L. Shepard, and P. Kim. Nature Physics 8 550-556 (2011). [link]


    High-frequency performance of graphene field effect transistors with saturating IV-characteristics
    I. Meric, C.R. Dean, S. J. Han, L. Wang, K. A. Jenking, J. Hone, and K. L. Shepard. IEDM (2011)

    Electron tunneling through atomically flat and ultrathin hexagonal boron nitride
    G.-H. Lee, Y.-J. Yu, C. Lee, C.R. Dean, K.L. Shepard, P. Kim, and J. Hone. Appl. Phys. Lett. 99 243114 (2011).

    Channel Length Scaling in Graphene Field-Effect Transistors Studied with Pulsed Current-Voltage Measurements
    I. Meric, C.R. Dean, A.F. Young, N. Baklitskaya, N. J. Tremblay, C. Nuckolls, P. Kim, and K. L. Shepard. Nano Lett. 11 (2011).

    Multicomponent fractional quantum Hall effect in graphene
    C.R. Dean, A.F. Young, P. Cadden-Zimansky, L.Wang, H. Ren, K.Watanabe, T. Taniguchi, P. Kim, J. Hone, and K.L. Shepard. Nature Phys. 7 693-696 (2011).


    Graphene field-effect transistors based on boron nitride dielectrics
    I. Meric, C.R. Dean, A.F. Young, J. Hone, P. Kim, and K.L. Shepard. IEDM (2010).

    Boron nitride substrates for high-quality graphene electronics
    C.R. Dean, A.F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K.L. Shepard, and J. Hone. Nature Nanotech. 5 722-726 (2010).

    2004 - 2009

    Current-induced nuclear spin activation in a two-dimensional electron gas
    C.R. Dean, B.A. Piot, G. Gervais, L.N. Pfeiffer, and K. West.. Phys. Rev. B 80 (2009).

    Contrasting Behavior of the 5/2 and 7/3 Fractional Quantum Hall Effect in a Tilted Field
    C.R. Dean, B.A. Piot, P. Hayden, S. Das Sarma, G. Gervais, L.N. Pfeiffer, and K. West. Phys. Rev. Lett. 101 (2008).

    Wigner crystallization in a quasi-3D electronic system
    B.A. Piot, Z. Jiang, C.R. Dean, L.W. Engel, G. Gervais, L.N. Pfeiffer, and K. West. Nature Phys. 4 (2008).

    Intrinsic Gap of the nu=5/2 Fractional Quantum Hall State
    C.R. Dean, B.A. Piot, P. Hayden, S. Das Sarma, G. Gervais, L.N. Pfeiffer, and K. West. Phys. Rev. Lett. 100, 146803 (2008).

    Resistively detected NMR in quantum Hall states: Investigation of the anomalous lineshape near nu=1
    C.R. Dean, B.A. Piot, L.N. Pfeiffer, K. West, and G. Gervai. Physica E, 40, 1252-1254 (2007).

    Local control of light polarization with low-temperature fibre optics
    A.H. Mack, J. Riordon, C.R. Dean, R. Talbot, and G. Gervais. Optics Lett. 32, 1378 (2007).

    Effect of the substrate surface condition on the Ni(thin film)/SiC(0001) interfacial reaction
    C. Dean, K. Robbie, and L.D. Madsen. J. Mater. Res. 22, 2522-2530 (2007).

    Thickness an density evaluation for nanostsructured thin films by glancing angle deposition
    C. Buzea, K. Kaminska, G. Beydaghyan, T. Brown, C. Elliot, C. Dean, and K. Robbie. J. Vac. Sci. and Technol. B 2, 2545-2553 (2005).

    Ultrahigh vacuum glancing angle deposition system for thin films with controlled 3-D nanoscale structure
    K. Robbie, G. Beydaghyan, T. Brown, C. Dean, J. Adams, and C. Buzea. Rev.Sci. Instr. 75, 1089-1097 (2004).
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